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Updated: May 27, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Magic carbon clusters in the chemical vapor deposition growth of graphene
Qinghong Yuan1, Junfeng Gao, Haibo Shu
1Institute of Textile and Clothing, Hong Kong Polytechnic University, Hong Kong, China.
Abstract:
Ground-state structures of supported C clusters, C(N) (N = 16, ..., 26), on four selected transition metal surfaces [Rh(111), Ru(0001), Ni(111), and Cu(111)] are systematically explored by ab initio calculations. It is found that the core-shell structured C(21), which is a fraction of C(60) possessing three isolated pentagons and C(3v) symmetry, is a very stable magic cluster on all these metal surfaces. Comparison with experimental scanning tunneling microscopy images, dI/dV curves, and cluster heights proves that C(21) is the experimentally observed dominating C precursor in graphene chemical vapor deposition (CVD) growth. The exceptional stability of the C(21) cluster is attributed to its high symmetry, core-shell geometry, and strong binding between edge C atoms and the metal surfaces. Besides, the high barrier of two C(21) clusters' dimerization explains its temperature-dependent behavior in graphene CVD growth.

