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Updated: May 27, 2026

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials
Published on: July 18, 2025
Stretching and breaking of ultrathin MoS2
Simone Bertolazzi1, Jacopo Brivio, Andras Kis
1Electrical Engineering Institute, Ecole Polytechnique Federale de Lausanne, CH-1015 Lausanne, Switzerland.
Abstract:
We report on measurements of the stiffness and breaking strength of monolayer MoS(2), a new semiconducting analogue of graphene. Single and bilayer MoS(2) is exfoliated from bulk and transferred to a substrate containing an array of microfabricated circular holes. The resulting suspended, free-standing membranes are deformed and eventually broken using an atomic force microscope. We find that the in-plane stiffness of monolayer MoS(2) is 180 ± 60 Nm(-1), corresponding to an effective Young's modulus of 270 ± 100 GPa, which is comparable to that of steel. Breaking occurs at an effective strain between 6 and 11% with the average breaking strength of 15 ± 3 Nm(-1) (23 GPa). The strength of strongest monolayer membranes is 11% of its Young's modulus, corresponding to the upper theoretical limit which indicates that the material can be highly crystalline and almost defect-free. Our results show that monolayer MoS(2) could be suitable for a variety of applications such as reinforcing elements in composites and for fabrication of flexible electronic devices.

