Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Multistable Kuramoto Splay States in a Crystal of Mode-Locked Laser Pulses.

Physical review letters·2025

Same author

Conservative Solitons and Reversibility in Time Delayed Systems.

Physical review letters·2022

Same author

Simplified description of dynamics in neuromorphic resonant tunneling diodes.

Chaos (Woodbury, N.Y.)·2021

Same author

Manipulation of temporal localized structures in a vertical external-cavity surface-emitting laser with optical feedback.

Optics letters·2021

Same author

Hopping and emergent dynamics of optical localized states in a trapping potential.

Chaos (Woodbury, N.Y.)·2020

Same author

Topological localized states in the time delayed Adler model: Bifurcation analysis and interaction law.

Chaos (Woodbury, N.Y.)·2020

Search research articles

Related Experiment Video

Updated: May 27, 2026

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Published on: November 22, 2019

Anticolliding design for monolithic passively mode-locked semiconductor lasers.

J Javaloyes¹, S Balle

¹Departament de Fisica, Universitat de les Illes Baleares, Palma, Spain. julien.javaloyes@uib.es

|November 18, 2011

Summary

Optimizing semiconductor laser design by placing the saturable absorber near an antireflection-coated facet significantly boosts output power and reduces jitter. This cavity modification also expands the stable mode-locking operational range.

More Related Videos

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

Published on: February 28, 2016

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

Related Experiment Videos

Last Updated: May 27, 2026

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Low-cost Custom Fabrication and Mode-locked Operation of an All-normal-dispersion Femtosecond Fiber Laser for Multiphoton Microscopy

Published on: November 22, 2019

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

Automation of Mode Locking in a Nonlinear Polarization Rotation Fiber Laser through Output Polarization Measurements

Published on: February 28, 2016

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics

Published on: April 24, 2014

Area of Science:

Optics and Photonics
Semiconductor Device Physics

Background:

Passively mode-locked semiconductor lasers are crucial for high-speed optical communications and signal processing.
Understanding cavity design is essential for optimizing laser performance, including output power and stability.

Purpose of the Study:

To theoretically analyze the performance of two-section, passively mode-locked semiconductor lasers.
To investigate the impact of saturable absorber placement within the laser cavity on operational characteristics.

Main Methods:

Theoretical analysis of two-section, passively mode-locked semiconductor laser structures.
Simulation of different cavity designs, focusing on saturable absorber proximity to facets.

Main Results:

Placing the saturable absorber section close to an antireflection-coated facet substantially increases output power.
This configuration significantly reduces amplitude and timing jitter in laser output.
The bias current region for stable passive mode-locking operation is broadened.

Conclusions:

Strategic placement of the saturable absorber is a key factor in enhancing passively mode-locked semiconductor laser performance.
Antireflection coating on the output facet, combined with optimal absorber placement, offers a pathway to improved laser stability and power output.