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Related Experiment Video

Updated: May 27, 2026

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

Published on: August 15, 2018

Domain dynamics during ferroelectric switching.

Christopher T Nelson¹, Peng Gao, Jacob R Jokisaari

¹Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109, USA.

Science (New York, N.Y.)

|November 19, 2011

Summary

This summary is machine-generated.

Researchers observed ferroelectric switching dynamics in a bismuth ferrite and lanthanum strontium manganite bilayer. Defects and interfaces were found to hinder complete ferroelectric switching in the thin film.

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Last Updated: May 27, 2026

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals

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Published on: August 15, 2018

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Ferroelectric materials enable polarization switching via electric fields, crucial for applications.
Understanding nanoscale polarization switching mechanisms requires advanced structural characterization.

Purpose of the Study:

To investigate the kinetics and dynamics of ferroelectric switching at the nanoscale.
To elucidate the role of interfaces and defects in ferroelectric switching behavior.

Main Methods:

Utilized aberration-corrected transmission electron microscopy for high-resolution imaging.
Achieved millisecond temporal and subangstrom spatial resolution to observe dynamic switching events.

Main Results:

Observed localized nucleation events at the electrode interface.
Documented domain wall pinning on point defects within the material.
Identified ferroelectric domain formation localized to the ferroelectric/ferromagnetic interface.

Conclusions:

Defects and interfaces significantly impede complete ferroelectric switching in thin films.
The study provides insights into nanoscale domain dynamics in complex heterostructures.