Related Experiment Video
Updated: May 27, 2026

10:36
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Strain-mediated phase control and electrolyte-gating of electron-doped manganites
Ping-Hua Xiang1, Shutaro Asanuma, Hiroyuki Yamada
1National Institute of Advanced Industrial, Science and Technology, Tsukuba, Japan. ph.xiang@aist.go.jp
Advanced Materials (Deerfield Beach, Fla.)
|November 23, 2011
Abstract:
A prototype Mott transistor, the electric double layer transistor with a strained CaMnO(3) thin film, is fabricated. As predicted by the strain phase diagram of electron-doped manganite films, the device with the compressively strained CaMnO(3) exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.
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