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Updated: May 27, 2026
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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors
1Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA.
Advanced Materials (Deerfield Beach, Fla.)
|November 23, 2011
Abstract:
A novel vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors has been developed. The non-destructive nature of this method allows a direct comparison of field-effect mobilities achieved with various gate dielectrics using the same single-crystal sample. The method also allows gating delicate systems, such as n -type crystals and SAM-coated surfaces, without perturbation.
