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Radio Frequency Magnetron Sputtering of GdBa2Cu3O7−δ/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 (STO) Single-crystal Substrates
Published on: April 12, 2019
Valence state-dependent ferromagnetism in Mn-doped NiO thin films
Wensheng Yan1, Zhihu Sun, Zhongrui Li
1National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230029, China. ywsh2000@ustc.edu.cn.
Abstract:
Manipulating the ferromagnetism of diluted magnetic semiconductors by tuning the valence state of doped ions is found to be achievable in Mn-doped NiO. First-principles calculations predict that the interactions between substitutional Mn(3+) ions in NiO are ferromagnetic, while the Mn(2+)-Mn(2+) interactions are antiferromagnetic. This scenario is experimentally supported by a great enhancement of saturation magnetization with increased Mn(3+)/Mn(2+) ratio in Mn-doped and (Mn, Li)-codoped NiO.
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