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Updated: May 27, 2026

Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems
Published on: April 28, 2016
Low bias electron scattering in structure-identified single wall carbon nanotubes: role of substrate polar phonons
Bhupesh Chandra1, Vasili Perebeinos, Stéphane Berciaud
1Department of Mechanical Engineering, Columbia University, New York, New York 10027, USA. bchandr@us.ibm.com
Abstract:
We have performed temperature-dependent electrical transport measurements on known structure single wall carbon nanotubes at low bias. The experiments show a superlinear increase in nanotube resistivity with temperature, which is in contradiction with the linear dependence expected from nanotube acoustic-phonon scattering. The measured electron mean free path is also much lower than expected, especially at medium to high temperatures (>100 K). A theoretical model that includes scattering due to surface polar phonon modes of the substrates reproduces the experiments very well. The role of surface phonons is further confirmed by resistivity measurements of nanotubes on aluminum nitride.
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