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Related Experiment Video

Updated: May 27, 2026

Observation and Analysis of Blinking Surface-enhanced Raman Scattering
05:52

Observation and Analysis of Blinking Surface-enhanced Raman Scattering

Published on: January 11, 2018

Blinking statistics of silicon quantum dots.

Benjamin Bruhn1, Jan Valenta, Fatemeh Sangghaleh

  • 1Materials Physics, School of ICT, Royal Institute of Technology, Electrum 229, SE-16440 Kista-Stockholm, Sweden. bbruhn@kth.se

Nano Letters
|November 24, 2011
PubMed
Summary

Single silicon quantum dots exhibit purely exponential blinking statistics, differing from literature findings. This suggests no statistical aging, with switching frequency linked to single-photon absorption.

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Area of Science:

  • Materials Science
  • Quantum Physics
  • Nanotechnology

Background:

  • Blinking in semiconductor nanocrystals is a key phenomenon for quantum applications.
  • Previous studies often report power-law distributions and statistical aging in nanocrystal ensembles.
  • Understanding single quantum dot behavior is crucial for device stability and performance.

Purpose of the Study:

  • To analyze the blinking statistics of individual silicon quantum dots.
  • To investigate the influence of excitation power on blinking behavior.
  • To compare blinking statistics with existing literature on nanocrystal ensembles.

Main Methods:

  • Fabrication of single silicon quantum dots using electron-beam lithography, plasma etching, and oxidation.
  • Detailed statistical analysis of on- and off-time distributions.

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  • Measurement of photoluminescence and switching frequency under varying excitation power densities.

    • Main Results:

    • Observed purely exponential on- and off-time distributions, indicating no statistical aging.
    • Found a linear increase in switching frequency with excitation power, suggesting single-photon absorption dominance.
    • Identified a threshold in excitation power where the photoluminescence increase transitions from linear to square-root behavior.
    • Demonstrated significant, uncorrelated variations in blinking parameters (on-time, frequency, amplitude) across individual quantum dots.

    Conclusions:

    • Single silicon quantum dots do not exhibit statistical aging, unlike many nanocrystal ensembles.
    • Blinking behavior is governed by single-photon absorption and direct charge transfer mechanisms.
    • The observed variations highlight the unique microscopic properties of each individual quantum dot.