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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Spin–Spin Coupling: One-Bond Coupling01:17

Spin–Spin Coupling: One-Bond Coupling

Coupling interactions are strongest between NMR-active nuclei bonded to each other, where spin information can be transmitted directly through the pair of bonding electrons. While nuclei polarize their electrons to the opposite spins, the bonding electron pair has opposite spins. Configurations with antiparallel nuclear spins are expected to be lower in energy. When coupling makes antiparallel states more favorable, J is considered to have a positive value. The one-bond coupling constant, 1J,...

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Related Experiment Video

Updated: May 27, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Tunable hot-electron transfer within a single core-shell nanowire.

Guannan Chen1, Eric M Gallo, Oren D Leaffer

  • 1Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104 USA.

Physical Review Letters
|November 24, 2011
PubMed
Summary
This summary is machine-generated.

This study demonstrates tunable hot electron transfer in core-shell nanowires. Researchers controlled electron transfer rates and phase delay using gating, photon energy, and intensity for nanoscale device applications.

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Last Updated: May 27, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

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Published on: January 19, 2018

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Area of Science:

  • Condensed matter physics
  • Nanotechnology
  • Materials science

Background:

  • Hot electron transfer is crucial for nanoscale electronic devices.
  • Controlling electron transfer rates and phase delay is essential for device performance.

Purpose of the Study:

  • To investigate and control hot photoexcited electron transfer across a cylindrical core-shell nanowire interface.
  • To explore the modulation of transfer rates and phase delay using electrostatic gating, photon energy, and intensity.

Main Methods:

  • Utilized a core-shell nanowire structure to study electron transfer.
  • Employed electrostatic gating, varied incident photon energy, and controlled photon intensity to modulate transfer rates.
  • Analyzed electron-electron and electron-phonon scattering mechanisms.

Main Results:

  • Achieved significant tunability of voltage onset for negative differential resistance and voltage-current phase.
  • Demonstrated control over hot-electron transfer rates influenced by geometric confinement and heterojunction shape.
  • Observed evidence of weak electron-phonon scattering and altered electron-electron scattering rates.
  • Introduced and controlled a continuously adjustable phase delay up to ~130° in a nanometer-scale device.

Conclusions:

  • Hot electron transfer in core-shell nanowires can be dynamically manipulated.
  • The findings enable the development of nanoscale devices with tunable phase delay.
  • This work provides insights into electron scattering mechanisms in confined geometries.