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Published on: August 2, 2019
Room-temperature quantum confinement effects in transport properties of ultrathin Si nanowire field-effect
Kyung Soo Yi1, Krutarth Trivedi, Herman C Floresca
1Department of Material Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, United States. ksyi@pusan.ac.kr
Abstract:
Quantum confinement of carriers has a substantial impact on nanoscale device operations. We present electrical transport analysis for lithographically fabricated sub-5 nm thick Si nanowire field-effect transistors and show that confinement-induced quantum oscillations prevail at 300 K. Our results discern the basis of recent observations of performance enhancement in ultrathin Si nanowire field-effect transistors and provide direct experimental evidence for theoretical predictions of enhanced carrier mobility in strongly confined nanowire devices.
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