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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Fabrication of silicon oxide nanodots with an areal density beyond 1 teradots inch(-2)
Ji Xu1, Sung Woo Hong, Weiyin Gu
1Department of Polymer Science and Engineering, University of Massachusetts, Amherst, 01003, USA.
Advanced Materials (Deerfield Beach, Fla.)
|November 26, 2011
Abstract:
The combination of solvent annealing, surface reconstruction, and a tone-reversal etching procedure provides an attractive approach to utilize block copolymer (BCP) lithography to fabricate highly ordered and densely packed silicon oxide nano-dots on a surface. The obtained silicon oxide nano-dots feature an areal density of 1.3 teradots inch(-2) .
