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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Capacitor With A Dielectric01:18

Capacitor With A Dielectric

Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
Capacitors01:15

Capacitors

Capacitors play a crucial role in car radios, where they filter and store frequencies to ensure clear signal reception. Essentially serving as energy storage devices, capacitors store energy within their electric field and are composed of two parallel conducting plates separated by a dielectric.
When a voltage source is connected to a capacitor, positive and negative charges accumulate on the opposite plates. This accumulation generates a potential difference that equals the product of the...
Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
Capacitor in an AC Circuit01:23

Capacitor in an AC Circuit

A capacitor is charged by passing an electric current through it, which causes the plates to start accumulating an electrostatic charge. Since the strength of the charging current is maximum when the capacitor plates are uncharged and gradually decreases exponentially until the capacitor is fully charged, the charging process is neither instantaneous nor linear. The property of a capacitor to store a charge on its plates is called its capacitance.
Consider a purely capacitive circuit consisting...

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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
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Capacitorless 1T-DRAM on crystallized poly-Si TFT.

Min Soo Kim1, Won Ju Cho

  • 1Department of Electronic Materials Engineering, Kwangwoon University, Seoul 447-1, Korea.

Journal of Nanoscience and Nanotechnology
|November 30, 2011
PubMed
Summary

Researchers explored single-transistor dynamic random-access memory (1T-DRAM) using polycrystalline-silicon thin-film transistors (poly-Si TFTs). Gate-induced drain leakage programming demonstrated improved memory properties, confirming the feasibility of 1T-DRAM in TFTs.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Device Physics

Background:

  • Investigating single-transistor dynamic random-access memory (1T-DRAM) based on polycrystalline-silicon thin-film transistors (poly-Si TFTs).
  • Exploring advanced semiconductor memory technologies for improved performance and integration.

Purpose of the Study:

  • To evaluate the performance of capacitor-less 1T-DRAM fabricated on poly-Si TFTs.
  • To compare different programming methods, specifically impact ionization and gate-induced drain leakage (GIDL) current programming.
  • To assess the feasibility of 1T-DRAM operation in TFT technology.

Main Methods:

  • Fabrication of poly-Si TFTs using low-pressure chemical vapor deposition (LPCVD) and eximer laser annealing (ELA).
  • Characterization of the 1T-DRAM device using impact ionization and GIDL current programming techniques.
  • Analysis of memory margin, floating body effect, kink effect, mobility, sensing margins, and retention times.

Main Results:

  • A clear memory margin between '1' and '0' states was observed.
  • The floating body effect and kink effect increased with decreasing channel length due to high mobility.
  • GIDL current programming exhibited superior memory properties compared to impact ionization programming.

Conclusions:

  • The study confirms the feasibility of applying 1T-DRAM operation to poly-Si TFTs.
  • While current sensing margins and retention times are not commercially viable, the results show promise for future TFT-based DRAM development.
  • GIDL programming is a more effective method for this type of device.