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Updated: May 27, 2026

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
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Second-harmonic generation in silicon waveguides strained by silicon nitride.

M Cazzanelli1, F Bianco, E Borga

  • 1Nanoscience Laboratory, Department of Physics, University of Trento, via Sommarive 14, 38123 Povo, Trento, Italy.

Nature Materials
|December 6, 2011
PubMed
Summary

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Researchers engineered silicon waveguides to exhibit second-order nonlinearity, a crucial property for all-optical data management and integrated light sources. This breakthrough enables efficient wavelength conversion at low optical powers using strained silicon photonics.

Area of Science:

  • Materials Science
  • Photonics
  • Solid-State Physics

Background:

  • Silicon photonics offers high speed and bandwidth for on-chip optical networks.
  • All-optical data management necessitates nonlinear silicon photonics.
  • Silicon's intrinsic third-order nonlinearity limits device applications; introducing second-order nonlinearity is highly desirable.

Purpose of the Study:

  • To engineer a silicon waveguide with a significant second-order nonlinearity.
  • To enable wideband wavelength conversion at low optical powers.
  • To explore new integrated light sources in silicon photonics.

Main Methods:

  • Inducing second-order nonlinearity in a silicon waveguide using a stressing silicon nitride overlayer.
  • Performing second-harmonic-generation experiments.

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  • Conducting first-principle calculations to determine nonlinear susceptibility.

    • Main Results:

    • A sizeable second-order nonlinearity was successfully induced in the silicon waveguide.
    • Large values of strain-induced bulk second-order nonlinear susceptibility were measured (up to 40 pm V⁻¹ at 2,300 nm).
    • Experimental and computational results confirmed the induced nonlinearity.

    Conclusions:

    • Strained silicon, engineered with a silicon nitride overlayer, exhibits significant second-order nonlinearity.
    • This nonlinear strained silicon platform enables efficient wavelength conversion at low optical powers.
    • It presents a competitive platform for integrated light sources across the near- to mid-infrared spectrum (1.2–10 μm).