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Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
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Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...
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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
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Published on: April 21, 2016

Hidden defects in silicon nanowires.

M I den Hertog1, C Cayron, P Gentile

  • 1CEA-INAC/UJF-Grenoble1 UMR-E, SP2M, LEMMA, PFNC-Minatec, 17 rue des Martyrs, F-38054 Grenoble, France.

Nanotechnology
|December 15, 2011
PubMed
Summary
This summary is machine-generated.

Recent studies suggest hexagonal phases in silicon nanowires (Si NWs), but this work clarifies that observed

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid-State Physics

Background:

  • Recent publications report hexagonal phases in silicon nanowires (Si NWs).
  • These reports are based on anomalous diffraction patterns and high-resolution transmission electron microscopy (HRTEM) images.
  • These observations challenge the classical diamond cubic structure of silicon.

Purpose of the Study:

  • To analyze the origin of 'odd' diffraction patterns and HRTEM images in Si NWs.
  • To differentiate between the presence of a hexagonal phase and 'hidden' defects.
  • To establish reliable methods for characterizing Si NW structures.

Main Methods:

  • Growth of Si NWs using Ni or Au catalysts with P or Al doping.
  • Analysis of diffraction patterns and HRTEM images from multiple observation directions.
  • Utilizing conventional transmission electron microscopy (TEM) techniques, including bright-field and dark-field imaging.
  • Examining cross-sectional slices of nanowires perpendicular to the growth axis.
  • Raman spectroscopy for defect analysis.

Main Results:

  • 'Odd' images and diffraction patterns in Si NWs are primarily attributed to planar defects causing superimposed crystal grains, not a long-range hexagonal phase.
  • Multiple observation directions and conventional TEM imaging are crucial for distinguishing between hexagonal phases and 'hidden' defects.
  • Raman spectroscopy peaks (504–511 cm⁻¹) in defect-rich NWs do not indicate a hexagonal phase, as they differ from the bulk silicon peak (520 cm⁻¹).

Conclusions:

  • The 'odd' observations in Si NWs are predominantly caused by planar defects, not a distinct hexagonal phase.
  • A combination of multi-directional TEM analysis and conventional imaging is essential for accurate structural characterization.
  • Raman spectroscopy is not a reliable method for identifying hexagonal phases in defect-rich Si NWs.