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Published on: March 24, 2019
Current-induced domain wall motion and magnetization dynamics in CoFeB/Cu/Co nanostripes
V Uhlíř1, J Vogel, N Rougemaille
1Institut Néel, CNRS and UJF, BP 166, 38042 Grenoble Cedex 9, France.
Current-induced domain wall motion in CoFeB nanostripes was investigated. Researchers found lower depinning thresholds and transverse magnetization rotation, influenced by magnetic layer interactions.
Area of Science:
- Spintronics
- Materials Science
- Condensed Matter Physics
Background:
- Understanding current-induced domain wall motion is crucial for developing advanced magnetic memory and logic devices.
- CoFeB-based multilayer structures are promising candidates for spintronic applications due to their unique magnetic properties.
Purpose of the Study:
- To investigate current-induced domain wall motion and magnetization dynamics in CoFeB/Cu/Co nanostripes.
- To compare the behavior of CoFeB layers with previously studied NiFe layers.
- To quantify magnetization rotation and analyze the influence of inter-layer magnetic interactions.
Main Methods:
- Utilized photoemission electron microscopy combined with x-ray magnetic circular dichroism (XMCD-PEEM) for high-resolution imaging.
- Performed quasi-static measurements to determine domain wall depinning characteristics.
- Employed time-resolved XMCD-PEEM to probe dynamic magnetization processes during current pulses.
Main Results:
- Current-induced domain wall motion in CoFeB was observed to be similar to NiFe, but with lower threshold current densities for depinning.
- Time-resolved measurements revealed transverse magnetization rotation in the CoFeB layer during current pulse application.
- Quantified tilt angles of magnetization rotation and compared them with theoretical calculations.
Conclusions:
- CoFeB/Cu/Co nanostripes exhibit efficient current-induced domain wall motion with reduced depinning currents.
- Magnetostatic interactions between the CoFeB and Co layers significantly influence the transverse magnetization rotation dynamics.
- The findings provide valuable insights for designing next-generation spintronic devices utilizing CoFeB materials.
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