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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Fundamental proximity effects in focused electron beam induced deposition
Harald Plank1, Daryl A Smith, Thomas Haber
1Institute for Electron Microscopy, Graz University of Technology, Steyrergasse 17, 8010 Graz, Austria. harald.plank@felmi-zfe.at
Optimizing electron beam induced deposition (EBID) on nonflat surfaces involves adjusting scanning pitch and patterning sequences. These strategies significantly boost volumetric growth rates for nanoscale direct write applications.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Science
Background:
- Electron beam induced deposition (EBID) is a nanoscale direct write method.
- Understanding proximity effects is crucial for optimizing EBID on nonflat surfaces.
Purpose of the Study:
- To investigate fundamental proximity effects in EBID on nonflat surfaces.
- To enhance volumetric growth rates for nanoscale direct write applications.
Main Methods:
- Experimental studies of EBID processes.
- Computational simulations of electron beam interactions.
- Analysis of scanning electron pitch and patterning sequences.
Main Results:
- Increasing scanning electron pitch enhanced growth rates by 250% through improved electron coefficients and recollection effects.
- Strategic patterning sequences reduced precursor depletion, increasing growth rates by over 90%.
Conclusions:
- Proximity effects significantly influence EBID performance on nonflat substrates.
- Optimized patterning parameters are key to maximizing volumetric growth rates in nanoscale direct write techniques.
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