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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Carrier relaxation in epitaxial graphene photoexcited near the Dirac point

S Winnerl1, M Orlita, P Plochocka

  • 1Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany. s.winnerl@hzdr.de

Physical Review Letters
|December 21, 2011
PubMed

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