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Updated: May 26, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
Published on: November 9, 2015
Laser ablation of silicon using a Bessel-like beam generated by a subwavelength annular aperture structure
Yuh-Yan Yu1, Chin-Kai Chang, Ming-Wei Lai
1Institute of Applied Mechanics, National Taiwan University, Taipei 10617, Taiwan.
Abstract:
Using a femtosecond laser incident to an oxide-metal-oxide film engraved with a subwavelength annular aperture (SAA) structure, we generated a Bessel-like beam to ablate silicon. Experimental results show that the silicon can be ablated with a 0.05 J/cm(2) input ablation threshold at 120 fs pulse duration. We obtained a surface hole possessing a diameter less than 1 μm. Optical performance, including depth-of-focus and focal spot of the SAA structure, were simulated using finite-different time-domain calculations. We found that a far-field laser beam propagating through a SAA structure possesses a submicrometer focal spot and high focus intensity. Our method can be easily adopted for surface machining in microfabrication applications.

