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n-ZnO/p-Si 3D heterojunction solar cells in Si holey arrays

Xiao-Mei Zhang1, Dmitri Golberg, Yoshio Bando

  • 1World Premier International (WPI) Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan. ZHANG.Xiaomei@nims.go.jp

Nanoscale
|December 27, 2011
PubMed

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P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...