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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Gate-controlled nonlinear conductivity of Dirac fermion in graphene field-effect transistors measured by terahertz

Inhee Maeng1, Seongchu Lim, Seung Jin Chae

  • 1Department of Physics, University of Seoul, Seoul 130-743, Korea.

Nano Letters
|January 5, 2012
PubMed

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