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Updated: May 26, 2026

Micro/Nano-scale Strain Distribution Measurement from Sampling Moiré Fringes

Micro/Nano-scale Strain Distribution Measurement from Sampling Moiré Fringes

Published on: May 23, 2017

Developments of scanning probe microscopy with stress/strain fields.

H X Guo¹, D Fujita

¹International Center for Materials Nano-architectonics (MANA), National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.

The Review of Scientific Instruments

|January 10, 2012

Summary

This summary is machine-generated.

A novel scanning probe microscopy system was developed to analyze stress and strain fields on surfaces in ultra-high vacuum. This innovative technique allows for detailed surface characterization under controlled mechanical stress.

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Area of Science:

Materials Science
Surface Science
Nanotechnology

Background:

Characterizing surface stress and strain is crucial for understanding material properties.
Existing methods often lack the resolution or environmental control needed for detailed analysis.
Developing in-situ techniques for stress/strain mapping is an ongoing challenge.

Purpose of the Study:

To develop and demonstrate a novel scanning probe microscopy system for analyzing stress/strain fields.
To integrate Scanning Tunneling Microscopy (STM) and Noncontact Atomic Force Microscopy (NC-AFM) in an ultra-high vacuum (UHV) environment.
To enable in-situ mechanical manipulation and observation of sample surfaces.

Main Methods:

Developed a UHV system combining STM and NC-AFM with XYZ-movable piezo-resistive probes.
Implemented non-optical frequency shift detection for compact AFM integration.
Utilized a step-motor-driven anvil for controlled sample bending to induce stress/strain.
Employed a DC power source for operation at room and high temperatures.
Used a long-focus microscope and monitor for real-time observation.

Main Results:

Successfully developed the first stress/strain fields scanning probe microscopy system for UHV environments.
Demonstrated the system's capability to induce and observe surface stress/strain.
Verified performance by investigating stressed silicon(111) at room temperature and silicon(001) at high temperature.

Conclusions:

The developed UHV scanning probe microscopy system is a powerful tool for in-situ stress/strain analysis.
This technique opens new avenues for studying surface phenomena under mechanical load.
The system's versatility allows for diverse applications in materials science and nanotechnology.