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Updated: May 26, 2026

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Soft Lithographic Functionalization and Patterning Oxide-free Silicon and Germanium
Published on: December 16, 2011
Direct patterning of TiO₂ using step-and-flash imprint lithography
Ramakrishnan Ganesan1, Jarrett Dumond, Mohammad S M Saifullah
1Institute of Materials Research and Engineering, A STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602, Republic of Singapore. ganesanr@imre.a-star.edu.sg
ACS Nano
|January 11, 2012
Summary
This study demonstrates step-and-flash imprint lithography (S-FIL) for direct patterning of titanium dioxide (TiO2) nanostructures. This novel method enables wafer-scale fabrication of functional oxides with high yield and precision.
Area of Science:
- Materials Science and Engineering
- Nanotechnology
- Lithography
Background:
- Step-and-flash imprint lithography (S-FIL) excels at fabricating sub-100 nm features using organic resists.
- Direct patterning of inorganic materials like oxides via S-FIL has been hindered by resist formulation and dispensing challenges.
Purpose of the Study:
- To demonstrate the proof-of-concept for S-FIL of titanium dioxide (TiO2) using a novel acrylate-based formulation.
- To overcome limitations in direct oxide patterning for wafer-scale fabrication.
Main Methods:
- Development of an acrylate-based formulation containing an allyl-functionalized titanium complex with high metal precursor content (48 wt %) and low viscosity (∼5 mPa·s).
- Utilizing automatic dispensing systems for formulation application, followed by UV radiation-induced rapid polymerization.
- Patterning of 100 nm gratings over five 1 cm × 1 cm fields and subsequent high-temperature (450 °C) heat treatment.
Main Results:
- Achieved high-yield (∼95%) S-FIL of the TiO2 precursor formulation, demonstrating good adhesion, spreading, and pattern density insensitivity.
- Successful imprinting of 100 nm gratings.
- Post-treatment conversion to TiO2 anatase nanostructures as small as 30 nm wide, retaining structural integrity and aspect ratio.
Conclusions:
- This work presents a viable S-FIL approach for direct wafer-scale patterning of functional oxides.
- The developed method overcomes previous limitations, paving the way for sub-100 nm scale oxide nanostructure fabrication.

