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Updated: May 25, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Graphene growth on a Pt(111) substrate by surface segregation and precipitation
Jian-Hua Gao1, Keisuke Sagisaka, Masayo Kitahara
1International Center for Young Scientists, National Institute for Materials Science, Japan. GAO.Jian-Hua@nims.go.jp
Abstract:
We report on the fabrication of a sizable graphene sheet on a carbon-doped Pt(111) substrate through surface segregation and precipitation. Scanning Auger electron spectroscopy (AES) reveals that the graphene covered more than 98% of the substrate surface. Our graphene consists of single-layer graphene across the substrate with fractions of several micrometer wide bi- and tri-layer graphene islands. We also show that the number of graphene layers can be precisely determined by analyzing AES data. While Raman spectroscopy is usually used to study graphene on SiO₂, we show that AES is a powerful tool to characterize graphene grown on metal substrates.

