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High-mobility field-effect transistors from large-area solution-grown aligned C60 single crystals.

Hanying Li¹, Benjamin C-K Tee, Judy J Cha

¹Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.

Journal of the American Chemical Society

|January 14, 2012

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Researchers developed a solution processing method to grow aligned C(60) single crystals for high-performance organic electronics. This technique yields high electron mobility, paving the way for scalable organic semiconductor applications.

Area of Science:

Materials Science
Organic Electronics
Semiconductor Physics

Background:

Organic semiconductors in field-effect transistors exhibit high charge carrier mobility, showing promise for electronic applications.
Fabricating single-crystal organic semiconductor devices, especially dense, aligned arrays over large areas, remains a significant challenge.

Purpose of the Study:

To develop a scalable solution processing method for growing large arrays of aligned C(60) single crystals.
To achieve high electron mobility in solution-processed organic semiconductors for potential electronic applications.

Main Methods:

A novel solution processing technique was employed to grow aligned C(60) single crystals on large-area substrates.
The method focused on achieving controlled alignment and high density of single-crystal structures.

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Main Results:

Aligned C(60) single-crystal needles and ribbons demonstrated high electron mobility, reaching up to 11 cm(2)V(-1)s(-1).
The observed mobility is significantly higher than previously reported values for solution-grown n-channel organic materials.
The deposition method is scalable to 100 mm wafer substrates, achieving approximately 50% surface coverage with aligned crystals.

Conclusions:

The developed method facilitates the fabrication of large quantities of high-quality organic semiconductor crystals.
The improved surface coverage and high mobility suggest suitability for large-area organic electronic applications and fundamental studies.