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Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity

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Trap-assisted recombination in disordered organic semiconductors.

M Kuik¹, L J A Koster, G A H Wetzelaer

¹Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.

Physical Review Letters

|January 17, 2012

Summary

Investigating trap-assisted recombination in organic semiconductors reveals that charge carrier mobility governs the process. This finding enables predictive modeling for organic light-emitting diodes (OLEDs).

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Area of Science:

Materials Science
Organic Electronics
Semiconductor Physics

Background:

Organic semiconductors are crucial for electronic devices like OLEDs.
Understanding recombination mechanisms is key to device performance.
Trap-assisted recombination impacts efficiency and lifetime.

Purpose of the Study:

To investigate the trap-assisted recombination process in organic semiconductors.
To determine the factors governing the capture coefficients.
To establish a link between recombination and charge carrier mobility.

Main Methods:

Analysis of electron and hole recombination dynamics.
Extraction and thermal analysis of capture coefficients.
Measurement of hole mobility (μ(p)).

Main Results:

Capture coefficients for trap-assisted recombination are thermally activated.
Activation energy matches that of hole mobility.
Rate-limiting step identified as hole diffusion towards trapped electrons.

Conclusions:

The capture coefficient is directly proportional to hole mobility: (q/ε)μ(p).
Both bimolecular and trap-assisted recombination are governed by charge carrier mobilities.
Enables predictive modeling of organic light-emitting diodes (OLEDs).