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Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
Published on: August 15, 2018
Chiral domains in cycloidal multiferroic thin films: switching and memory effects
1Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra 08193, Catalonia, Spain. ignasifinamartinez@gmail.com
Physical Review Letters
|January 17, 2012
Summary
Chiral magnetic order in AMnO(3) perovskites induces ferroelectricity. Their chiral domain switching depends on magnetoelectric history, showing partial memory due to electric field coupling and domain wall pinning.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Magnetism and Ferroelectricity
Background:
- Cycloidal magnetic order in AMnO(3) perovskites is a known mechanism for inducing ferroelectricity.
- The resulting polarization is intrinsically linked to the cycloid's propagation vector, chirality, and the chiral domain structure.
Purpose of the Study:
- To investigate the influence of magnetoelectric history on the switching dynamics of chiral domains in AMnO(3) perovskites.
- To explore the potential for magnetic order to exhibit chiral memory through controlled field cycling.
Main Methods:
- Experimental investigation of chiral domain switching behavior.
- Application of controlled magnetic and electric field cycling.
- Analysis of magnetoelectric coupling effects on domain structure.
Main Results:
- Chiral domain switching is highly sensitive to the sample's magnetoelectric history.
- Partial chiral memory in magnetic order can be achieved through specific field cycling protocols.
- Evidence suggests electric field coupling and domain wall interactions govern this memory effect.
Conclusions:
- The magnetoelectric history plays a critical role in the ferroelectric switching of AMnO(3) perovskites.
- Chiral magnetic memory effects are observable and linked to fundamental domain wall physics.
- This work provides insights into controlling ferroelectric properties via magnetic order in multiferroic materials.
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