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Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
Published on: June 18, 2013
Geometrical frustration in nanowire growth
K W Schwarz1, J Tersoff, S Kodambaka
1IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598, USA.
Physical Review Letters
|January 17, 2012
Summary
Simulations reveal how nonorthogonal facets in nanowire growth lead to distinct modes, impacting growth control. These findings offer new insights into semiconductor nanostructure fabrication.
Area of Science:
- Materials Science
- Nanotechnology
- Computational Modeling
Background:
- Traditional nanowire models assume orthogonal facet orientations.
- Real-world nanowire growth, such as Au-catalyzed Si, often involves nonorthogonal facets.
- Understanding deviations from idealized geometries is crucial for precise nanostructure fabrication.
Purpose of the Study:
- To simulate and analyze nanowire growth with nonorthogonal facet orientations.
- To compare simulation results with in situ microscopy observations.
- To identify and characterize different growth modes arising from nonorthogonal facets.
Main Methods:
- Development of growth simulations incorporating mixed, nonorthogonal facet orientations.
- In situ microscopy to observe and validate simulation predictions.
- Comparative analysis of simulation and experimental data.
Main Results:
- Simulations accurately predicted experimental observations of nanowire growth.
- Identified two distinct growth modes: sawtooth-textured sidewalls and angled growth fronts.
- Demonstrated that small environmental changes can reversibly switch between these growth modes.
Conclusions:
- Nonorthogonal facet orientations significantly influence nanowire growth dynamics.
- The identified growth modes provide a framework for understanding and controlling nanowire morphology.
- These findings have critical implications for the design and fabrication of advanced nanodevices.
