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Synthesis of In37P20(O2CR)51 Clusters and Their Conversion to InP Quantum Dots
Published on: May 7, 2019
Photoluminescence study of low density InAs quantum clusters grown by molecular beam epitaxy
Ying Yu1, Mi-Feng Li, Ji-Fang He
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China. yuying@semi.ac.cn
Abstract:
We report a systematic optical spectroscopy study of low density InAs quantum clusters (QCs) grown by molecular beam epitaxy. The photoluminescence (PL) spectra show emission features of a wetting layer (WL) which contains hybridized quantum well states. The low-energy tail of the QCs' PL profile is actually an ensemble of some sharp lines, originating from the emission of different exciton states (e.g. X, X*, XX*) in a single quasi-three-dimensional (Q3D) cluster as detailed in the micro-PL spectra. The temperature dependence of PL spectra indicates photocarrier distribution and transport in the QC-WL system. Furthermore, this small InAs Q3D cluster is integrated with a distributed Bragg reflector structure, and using optical excitation creates a single photon source with the second-order correlation function of g((2))(0) = 0.31 at 16 K.
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