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Updated: May 25, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Narrow-line-width 1.31-μm wavelength tunable quantum dot laser using sandwiched sub-nano separator growth technique
Naokatsu Yamamoto1, Kouichi Akahane, Tetsuya Kawanishi
1National Institute of Information and Communications Technology, 4-2-1 Nukui-kita, Koganei, Tokyo 184-8795, Japan. naokatsu@nict.go.jp
Abstract:
A wide wavelength tunable quantum dot (QD) external cavity laser operating in the 1.31-μm waveband with a narrow line-width is successfully demonstrated. A high-density, high-quality InAs/InGaAs QD optical gain medium for the 1.31-μm waveband was obtained using a sandwiched sub-nano separator growth technique. A wide wavelength tunability of 1.265-1.321 μm and a narrow line-width of 210 kHz were successfully achieved using a compact and robust external cavity system constructed with multiple optical band-pass and etalon filters for active optical mode selection. The laser also achieved an error-free 10-Gb/s photonic data transmission over an 11.4-km-long holey fiber.

