Related Experiment Video
Updated: May 25, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Degenerate electronic structure of reconstructed MnSi(1.7) nanowires on Si(001)
1National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 305-0044, Japan.
Abstract:
Higher manganese silicide nanowires have been grown on the Si(001)-2 × 1 surface by the pre-growth of Bi nanolines. Scanning tunnelling microscope (STM) observations show that the nanowire has a linear surface reconstruction with a periodicity of 0.56 nm, and we propose a reconstruction on their surface to reduce the density of dangling bonds, which forms linear structures matching the dimensions from STM. Scanning tunnelling spectroscopy (STS) data agree with previous calculation results and reveal that the nanowires are degenerate semiconductors, with potential application for spintronics.

