Related Experiment Video

Updated: May 25, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Multisubband transport and magnetic deflection of Fermi electron trajectories in three terminal junctions and rings

M R Poniedziałek1, B Szafran

  • 1AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Kraków, Poland.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|January 27, 2012
PubMed

More Related Videos

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

Related Concept Videos

Magnetic Field due to Moving Charges01:23

Magnetic Field due to Moving Charges

A stationary charge creates and interacts with the electric field, while a moving charge creates a magnetic field.
Consider a point charge moving with a constant velocity. Like the electric field, the magnetic field at any point is directly proportional to the magnitude of the charge and inversely proportional to the square of the distance between the source point and the field point. However, unlike the electric field, the magnetic field is always perpendicular to the plane containing the line...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Magnetic Force Between Two Parallel Currents01:13

Magnetic Force Between Two Parallel Currents

Two long, straight, and parallel current-carrying conductors exert a force of equal magnitude on one another. The direction of the force depends on the current direction in the conductors.
The force exerted by the magnetic field due to the first conductor over a finite length of the second conductor is given as the product of the current in the second conductor and  the vector product of the length vector along the current element and the field due to the first conductor. According to the...
Magnetic Field Due To A Thin Straight Wire01:27

Magnetic Field Due To A Thin Straight Wire

Consider an infinitely long straight wire carrying a current I. The magnetic field at point P at a distance a from the origin can be calculated using the Biot-Savart law.