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Updated: May 25, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Floating electrode transistor based on purified semiconducting carbon nanotubes for high source-drain voltage
Joohyung Lee1, Hyungwoo Lee, Taekyeong Kim
1Department of Physics and Astronomy, Seoul National University, Seoul, Korea.
Abstract:
We report floating-electrode-based thin-film transistors (F-TFTs) based on a purified semiconducting single-walled carbon nanotube (swCNT) network for a high source-drain voltage operation. At a high source-drain voltage, a conventional swCNT-TFT exhibited poor transistor performance with a small on-off ratio, which was attributed to the reduced Schottky barrier modulation at a large bias. In the F-TFT device, an swCNT network channel was separated into a number of channels connected by floating electrodes. The F-TFTs exhibited a much higher on-off ratio than a conventional swCNT-TFT with a single channel. This work should provide an important guideline in designing swCNT-TFTs for high voltage applications such as displays.
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