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Updated: May 25, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Polarization-induced charge distribution at homogeneous zincblende/wurtzite heterostructural junctions in ZnSe
Luying Li1, Lei Jin, Jianbo Wang
1Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USA. luying.li@asu.edu
Abstract:
Homogeneous heterostructural wurtzite (WZ)/zincblende (ZB) junctions are successfully fabricated in ZnSe nanobelts. Polarity continuity across the ZB/WZ interface is demonstrated. The saw-tooth-like potential profile induced by spontaneous polarization across the WZ/ZB/WZ interfaces is identified directly at the nanoscale. The polarization-induced charge distribution across the homogeneous heterostructural interfaces is proposed as a viable alternative approach towards charge tailoring in semiconductor nanostructures.
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