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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Transformation of Plane Strain01:12

Transformation of Plane Strain

When analyzing elongated structures like bars subjected to uniformly distributed loads, it is essential to understand the transformation of plane strain when coordinate axes are rotated. This transformation helps to assess how material deformation characteristics vary with orientation, which is crucial in materials science and structural engineering.
Under plane strain conditions, typical for members where one dimension significantly exceeds the others, deformations and resultant strains are...
Imperfections in Crystal Structure: Non-Stoichiometric Defects01:29

Imperfections in Crystal Structure: Non-Stoichiometric Defects

Non-stoichiometric defects refer to a type of defect in the crystal structure of a compound where the ratio of its constituent elements deviates from the ideal stoichiometric ratio. There are two main types of non-stoichiometric defects: metal excess defects and metal deficiency defects.Metal excess defects occur when there is a slight surplus of metal ions than what is required by the stoichiometric ratio of the compound. For example, heating a sodium chloride crystal in sodium vapor results...
Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...
Stress-Strain Diagram - Ductile Materials01:24

Stress-Strain Diagram - Ductile Materials

The stress-strain relationship in ductile materials such as structural steel or aluminium is intricate and progresses through several stages. When a specimen is loaded, it initially exhibits a linear length increase, depicted by a steep straight line on the stress-strain diagram. It indicates the material is elastically deforming and will return to its original shape once unloaded. However, when a critical stress value is reached, plastic deformation begins. This stage sees substantial...
Elastic Strain Energy for Shearing Stresses01:20

Elastic Strain Energy for Shearing Stresses

As discussed in previous lessons, strain energy in a material is the energy stored when it is elastically deformed, a concept crucial in materials science and mechanical engineering. This energy results from the internal work done against the cohesive forces within the material. When a material undergoes shearing stress and corresponding shearing strain, the strain energy density, which is the energy stored per unit volume, is calculated. Within the elastic limit, where the stress is...

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Related Experiment Video

Updated: May 25, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

Tailoring interface structure in highly strained YSZ/STO heterostructures

A Rivera-Calzada, M R Diaz-Guillen, O J Dura

    Advanced Materials (Deerfield Beach, Fla.)
    |February 3, 2012
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    No abstract available in PubMed .

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