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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Field-effect tunneling transistor based on vertical graphene heterostructures

L Britnell1, R V Gorbachev, R Jalil

  • 1School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK.

Science (New York, N.Y.)
|February 4, 2012
PubMed

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