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Random sequential adsorption of partially oriented linear k-mers on a square lattice
Nikolai I Lebovka1, Natalia N Karmazina, Yuri Yu Tarasevich
1Institute of Biocolloidal Chemistry named after FD Ovcharenko, NAS of Ukraine, 42 Boulevard Vernadskogo, 03142 Kiev, Ukraine. lebovka@gmail.com
Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics
|February 7, 2012
Summary
This study explores jamming phenomena using random sequential adsorption of linear k-mers. Results show k-mer alignment significantly impacts jamming thresholds, with disordered systems favoring denser configurations for small k-mers and ordered systems for larger ones.
Area of Science:
- Statistical Physics
- Materials Science
- Computational Modeling
Background:
- Jamming phenomena are critical in understanding the transition from fluid to solid states.
- Random sequential adsorption (RSA) models particle deposition and packing.
- Anisotropic deposition of linear k-mers introduces directional biases.
Purpose of the Study:
- Investigate jamming phenomena on a square lattice using anisotropic RSA of linear k-mers.
- Examine the effect of k-mer length and alignment on jamming thresholds.
- Analyze jamming configurations and void formation in partially ordered systems.
Main Methods:
- Simulated anisotropic random sequential adsorption (RSA) of linear k-mers.
- Varied k-mer length from 2 to 256.
- Analyzed jamming configurations and threshold variations based on order parameter and alignment.
Main Results:
- Ordered systems align with 1D analytical results, approaching Rényi's parking constant for large k.
- Disordered systems match published results for short k-mers.
- Partially oriented systems form blocks of vertical/horizontal k-mers with large voids, dependent on order parameter and k-mer length.
Conclusions:
- K-mer alignment critically influences jamming thresholds and configuration density.
- Small k-mers (k≤4) pack denser in disordered systems, while longer k-mers pack denser in ordered systems.
- Jamming configurations are complex, featuring block structures and voids influenced by anisotropic deposition parameters.
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