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Related Experiment Video

Updated: May 25, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Atomic layer deposition for nanofabrication and interface engineering.

Monan Liu1, Xianglin Li, Siva Krishna Karuturi

  • 1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.

Nanoscale
|February 7, 2012
PubMed
Summary
This summary is machine-generated.

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Atomic layer deposition (ALD) enables precise nanofabrication for advanced applications. This technique is crucial for developing new materials in photonics, SERS, and energy storage, enhancing device performance and lifespan.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Surface Chemistry

Background:

  • Atomic layer deposition (ALD) is a key technique for conformal coating on nanostructures.
  • ALD enables precise control over surface properties and template-directed nanofabrication.

Purpose of the Study:

  • To highlight the diverse applications of ALD in photonics, SERS, and energy materials.
  • To discuss the fabrication of nanostructures for SERS, 3D photoanodes for solar energy, and electrode coatings for batteries.
  • To explore dielectric coatings for tailoring optical properties of semiconductor nanostructures.

Main Methods:

  • Review of ALD applications in fabricating plasmonic nanostructures.
  • ALD for creating 3-D nanoarchitectured photoanodes for dye-sensitized and photoelectrochemical solar cells.

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  • ALD for electrode coating to improve battery cyclic stability.
  • ALD for dielectric coatings on ZnO nanowires to tune optical properties.

    • Main Results:

    • ALD facilitates the fabrication of uniform, conformal coatings on complex nanostructures.
    • ALD-enabled nanostructures show promise in SERS applications.
    • ALD contributes to enhanced performance and longevity in solar energy conversion devices and batteries.
    • Dielectric coatings via ALD can effectively tailor the optical characteristics of semiconductor nanostructures.

    Conclusions:

    • ALD is a versatile technique with significant impact across photonics, SERS, and energy materials.
    • Future research directions for ALD in these fields are promising.
    • ALD's ability to precisely engineer materials at the nanoscale drives innovation in advanced technologies.