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Can amorphization take place in nanoscale interconnects?

S Kumar1, K L Joshi, A C T van Duin

  • 1Mechanical and Nuclear Engineering, Penn State University, University Park, PA 16802, USA.

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|February 11, 2012
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Defect density, not just heat or pressure, drives amorphization in nanoelectronic interconnects. This phenomenon, observed at low current densities, can precede electromigration and impact device reliability.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid-State Physics

Background:

  • Miniaturization in nanoelectronics presents challenges in heat dissipation and electromigration.
  • Amorphization is typically associated with high pressure and/or temperature conditions.

Purpose of the Study:

  • To investigate the role of defect density in amorphization of nanoelectronic interconnects.
  • To determine if amorphization can occur at conditions not typically associated with high temperature or pressure.
  • To understand the implications of amorphization on device reliability.

Main Methods:

  • In situ transmission electron microscopy (TEM) experiments on aluminum thin films.
  • Electron diffraction pattern analysis.
  • Molecular dynamics (MD) simulations.

Main Results:

  • Partial amorphization was observed in aluminum specimens at a modest current density (10^5 A cm^-2), below the threshold for electromigration.
  • Amorphization led to a significant decrease in mechanical ductility and conductivity.
  • Brittle fracture failure occurred at higher current densities (7 × 10^5 A cm^-2).
  • MD simulations predicted amorphous region formation due to mechanical stress and excess vacancies.

Conclusions:

  • Defect density, influenced by grain boundaries and triple points in nanoscale interconnects, is the primary driver of amorphization.
  • Amorphization can precede electromigration in micro/nanoelectronic devices.
  • Understanding amorphization is crucial for enhancing the reliability of nanoelectronic devices.