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Updated: May 25, 2026

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Published on: July 11, 2025
Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)
Thomas Maassen1, J Jasper van den Berg, Natasja Ijbema
1Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands. t.maassen@rug.nl
Abstract:
We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times τ(S) in monolayer graphene, while the spin diffusion coefficient D(S) is strongly reduced compared to typical results on exfoliated graphene. The increase of τ(S) is probably related to the changed substrate, while the cause for the small value of D(S) remains an open question.

