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Related Experiment Video

Updated: May 25, 2026

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions.

Xi Xiao¹, Hao Xu, Xianyao Li

¹Optoelectronic System Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. xixiao@semi.ac.cn

|February 15, 2012

Summary

This study demonstrates a high-speed silicon microring modulator with interleaved PN junctions, achieving excellent modulation efficiency and alignment tolerance for optical communication. Its novel doping profile enables robust performance at 25 Gbit/s with low driving voltage.

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Area of Science:

Photonics
Semiconductor Devices
Optical Communications

Background:

Microring resonators are crucial for integrated photonics.
Efficient and tolerant modulators are needed for high-speed optical networks.

Purpose of the Study:

To demonstrate a high-speed silicon microring modulator with enhanced performance.
To achieve high modulation efficiency and large alignment tolerance.

Main Methods:

Fabrication using standard 0.18 μm complementary metal-oxide-semiconductor (CMOS) processes.
Optimization of interleaved PN junctions and doping profiles.
Experimental characterization of modulation efficiency, alignment tolerance, and data transmission.

Main Results:

Low V(π)L(π) values of 0.68 V·cm to 1.64 V·cm achieved.
Modulation efficiency decreased by only 12.4% under ± 150 nm alignment errors.
25 Gbit/s non-return-zero modulation realized with a 4.5 dB extinction ratio at 2 V driving voltage.

Conclusions:

The novel doping profile significantly enhances modulator performance.
The demonstrated device offers a promising solution for high-speed, cost-effective optical communication.
The device exhibits excellent tolerance to alignment errors, simplifying integration.