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Updated: May 25, 2026

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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Direct observations of retention failure in ferroelectric memories
Peng Gao1, Christopher T Nelson, Jacob R Jokisaari
1Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109, USA.
Advanced Materials (Deerfield Beach, Fla.)
|February 15, 2012
Abstract:
Nonvolatile ferroelectric random-access memory uses ferroelectric thin films to save a polar state written by an electric field that is retained when the field is removed. After switching, the high energy of the domain walls separating regions of unlike polarization can drive backswitching resulting in a loss of switched domain volume, or in the case of very small domains, complete retention loss.

