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SiOx/SiNy multilayers for photovoltaic and photonic applications
Ramesh Pratibha Nalini1, Larysa Khomenkova, Olivier Debieu
1CIMAP UMR CNRS/CEA/ENSICAEN/UCBN, 6 Bd, Maréchal Juin, 14050 Caen Cedex 4, France. pratibha-nalini.sundar@ensicaen.fr.
Nanoscale Research Letters
|February 16, 2012
Summary
Silicon nitride (SiNy) multilayers offer enhanced conductivity and optical properties for photovoltaic and photonic applications. These advanced materials, featuring silicon nanoclusters, show promise for efficient energy conversion and light emission technologies.
Area of Science:
- Materials Science and Engineering
- Nanotechnology
- Solid State Physics
Background:
- Silicon oxide (SiOx) based multilayers are widely studied for optoelectronic applications.
- Optimizing material properties requires careful control over fabrication and thermal processing.
Purpose of the Study:
- To investigate the microstructural, electrical, and optical properties of undoped and Nd3+-doped SiOx/SiNy multilayers.
- To demonstrate the advantages of using SiNy as an alternating sublayer compared to SiO2.
- To assess the impact of thermal treatment on these multilayer properties.
Main Methods:
- Fabrication of SiOx/SiNy multilayers using reactive radio frequency magnetron co-sputtering.
- Investigation of material properties through microstructural analysis, electrical measurements, and optical characterization.
- Comparative analysis with SiOx/SiO2 multilayer systems.
Main Results:
- Achieved a high density of silicon nanoclusters (10^19 nc/cm^3) within the SiOx sublayers.
- Observed enhanced electrical conductivity, light emission, and absorption properties.
- Demonstrated superior Nd3+ emission in SiOx/SiNy multilayers compared to SiOx/SiO2 counterparts.
- Confirmed property enhancements at a low thermal budget.
Conclusions:
- SiNy is a superior alternating sublayer compared to SiO2 for fabricating advanced silicon-based multilayers.
- The developed SiOx/SiNy multilayers exhibit promising characteristics for efficient photovoltaic applications.
- Enhanced Nd3+ emission suggests significant potential for future photonic device development.
