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Photonic design principles for ultrahigh-efficiency photovoltaics

Albert Polman1, Harry A Atwater

  • 1FOM Institute AMOLF, Science Park 104, 1098 XG Amsterdam, The Netherlands.

Nature Materials
|February 22, 2012
PubMed
Abstract

No abstract available in PubMed .

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...