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Epitaxial ferroelectric heterostructures fabricated by selective area epitaxy of SrRuO3 using an MgO mask
J Karthik1, Anoop R Damodaran, Lane W Martin
1Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana-Champaign, Urbana, IL 61801, USA.
Abstract:
Illustration of a new high-temperature hard-mask process based on traditional lithography and selective wet-etching of MgO. The hard mask is compatible with standard nano-lithography techniques and heat treatments in excess of 1000 °C. Here, this technique is applied to produce temperature-stable contacts that give rise to low leakage, improved fatigue properties, and excellent high-temperature stability in ferroelectric thin-film capacitors.

