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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Chemical Synapses01:26

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Chemical synapses are specialized sites between two neurons or between a neuron and a non-neuronal cell like a muscle, glandular or sensory cell.
Because chemical synapses depend on the release of neurotransmitter molecules from synaptic vesicles to pass on their signal, there is an approximately one millisecond delay between when the axon potential reaches the presynaptic terminal and when the neurotransmitter leads to opening of postsynaptic ion channels. Additionally, this signaling is...
Chemical Synapses01:26

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Chemical synapses are specialized sites between two neurons or between a neuron and a non-neuronal cell like a muscle, glandular or sensory cell.
Because chemical synapses depend on the release of neurotransmitter molecules from synaptic vesicles to pass on their signal, there is an approximately one millisecond delay between when the axon potential reaches the presynaptic terminal and when the neurotransmitter leads to opening of postsynaptic ion channels. Additionally, this signaling is...
Electrical Synapses01:28

Electrical Synapses

Electrical synapses found in all nervous systems play important and unique roles. In these synapses, the presynaptic and postsynaptic membranes are very close together (3.5 nm) and are actually physically connected by channel proteins forming gap junctions.
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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Evaluating Plasmonic Transport in Current-carrying Silver Nanowires
09:00

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Published on: December 11, 2013

A chemically-responsive nanojunction within a silver nanowire.

Wendong Xing1, Jun Hu, Sheng-Chin Kung

  • 1Department of Chemistry, University of California, Irvine, California 92697-2025, USA.

Nano Letters
|February 25, 2012
PubMed
Summary
This summary is machine-generated.

Chemically responsive junctions in silver nanowires show significant, rapid resistance changes upon exposure to ammonia. This discovery enables sensitive gas detection with potential applications in environmental monitoring.

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Area of Science:

  • Nanotechnology
  • Materials Science
  • Chemical Sensing

Background:

  • Development of novel chemical sensors is crucial for environmental and industrial monitoring.
  • Silver nanowires offer unique electrical properties for nanoscale device applications.

Purpose of the Study:

  • To create and characterize a nanometer-scale chemically responsive junction (CRJ) within a silver nanowire.
  • To investigate the CRJ's response to various chemical analytes for sensing applications.

Main Methods:

  • Fabrication of silver nanowires on glass via electrodeposition.
  • Creation of a 1-5 nm gap using electromigration.
  • Formation of a CRJ by voltage ramp reconnection.
  • Gas exposure experiments with ammonia, water vapor, and nitrogen dioxide.
  • Electrical characterization including temperature-dependent conductivity measurements.
  • Theoretical validation using density functional theory (DFT) calculations.

Main Results:

  • Successfully formed a resistive, ohmic CRJ within a silver nanowire.
  • Observed rapid (<30 s) and reversible resistance changes upon ammonia exposure (up to +138% at 7% NH(3), detectable down to 500 ppm).
  • Demonstrated weaker responses to water vapor (+10-15%) and nitrogen dioxide (-10-15% at 500 ppm).
  • Proposed mechanism involves the formation of p-type Ag(x)O within the CRJ, whose conductivity is modulated by analyte binding.

Conclusions:

  • The CRJ exhibits high sensitivity and selectivity towards ammonia.
  • The p-type Ag(x)O formation is key to the CRJ's chemical responsiveness.
  • This technology holds promise for developing highly sensitive and rapid gas sensors.