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Effect of aperiodicity on the broadband reflection of silicon nanorod structures for photovoltaics

Chenxi Lin1, Ningfeng Huang, Michelle L Povinelli

  • 1Ming Hsieh Department of Electrical Engineering and Center for Energy Nanoscience, University of Southern California, Los Angeles, CA, USA. chenxil@usc.edu

Optics Express
|March 3, 2012
PubMed

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P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...