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Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Related Experiment Video

Updated: May 24, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Published on: October 23, 2018

Schottky barrier thin film transistors using solution-processed n-ZnO.

Ahmad H Adl1, Alex Ma, Manisha Gupta

  • 1Department of Electrical & Computer Engineering, University of Alberta, Edmonton, AB T6G 2 V4 Canada.

ACS Applied Materials & Interfaces
|March 6, 2012
PubMed
Summary

Researchers improved solution-processed zinc oxide thin film transistors (TFTs) by incorporating source injection barriers. This method enhances electrical characteristics, enabling better control and reliability in electronic devices.

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Area of Science:

  • Materials Science
  • Electronics Engineering

Background:

  • Solution-processed zinc oxide (ZnO) thin films are promising for low-cost thin film transistors (TFTs).
  • Existing ZnO TFTs face challenges like lack of enhancement mode operation, low mobility, and unreliability due to defects.

Purpose of the Study:

  • To enhance the electrical characteristics of solution-processed ZnO TFTs.
  • To demonstrate the effectiveness of source injection barriers in improving TFT performance.

Main Methods:

  • Fabrication of asymmetrical Schottky source metal-oxide-semiconductor field-effect transistors (MOSFETs) using heavily doped solution-processed ZnO.
  • Utilizing triethylamine as a stabilizer to obtain n(+)-ZnO.
  • Employing gold (Au) for the source Schottky contact and aluminum (Al) for the drain ohmic contact.

Main Results:

  • Achieved field emission through the Schottky barrier by applying gate voltage.
  • Demonstrated modulation of drain current by varying the Schottky barrier width.
  • Obtained effective control over transistor characteristics by reverse biasing the Schottky contact.

Conclusions:

  • Source injection barriers significantly improve the electrical characteristics of solution-processed ZnO TFTs.
  • Asymmetrical Schottky MOSFETs offer a viable approach for reliable and controllable ZnO-based transistors.
  • This advancement paves the way for improved low-cost electronic devices.