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Rhodium pyrazolate complexes as potential CVD precursors.

Joseph H Rivers1, Lauren J DePue Anderson, Cotton M N Starr

  • 1Department of Chemistry and Biochemistry, The University of Texas at Austin, 1 University Station A15300, Austin, TX 78712-0165, USA.

Dalton Transactions (Cambridge, England : 2003)
|March 7, 2012
PubMed
Summary
This summary is machine-generated.

New rhodium complexes were synthesized and evaluated as chemical vapor deposition (CVD) precursors. These complexes successfully formed thin films of rhodium and rhodium phosphide using various carrier gases.

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Area of Science:

  • Organometallic Chemistry
  • Materials Science
  • Chemical Vapor Deposition

Background:

  • Bis-trifluoromethyl pyrazolate ligands offer unique electronic properties for organometallic complexes.
  • Rhodium complexes are investigated for their potential as precursors in thin film deposition.

Purpose of the Study:

  • To synthesize novel dinuclear and mononuclear rhodium complexes featuring bis-trifluoromethyl pyrazolate ligands.
  • To evaluate the suitability of these synthesized rhodium complexes as precursors for chemical vapor deposition (CVD).

Main Methods:

  • Synthesis of dinuclear rhodium complexes ([Rh(η(2)-C(2)H(4))(2)(μ-3,5-(CF(3))(2)-Pz)](2) and [Rh(2)(μ-Cl)(μ-3,5-(CF(3))(2)-Pz)(PMe(3))(4)]) and mononuclear complexes ([Rh(3,5-(CF(3))(2)-Pz)(PMe(3))(3)] and [Rh(PMe(3))(4)][3,5-(CF(3))(2)-Pz]).
  • Chemical Vapor Deposition (CVD) experiments were conducted in a hot wall reactor using argon or hydrogen as carrier gases at controlled temperatures and pressures.

Main Results:

  • Successful synthesis of several new rhodium complexes with bis-trifluoromethyl pyrazolate ligands.
  • Thin films of face-centered cubic rhodium (fcc-Rh) were deposited from complex 1.
  • Metastable-amorphous rhodium phosphide (Rh(2)P) films were deposited from complex 3.

Conclusions:

  • The synthesized rhodium complexes, specifically 1 and 3, demonstrate potential as effective precursors for CVD applications.
  • The choice of carrier gas (Ar or H2) influences the resulting film's phase (polycrystalline or amorphous).