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Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

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Published on: January 21, 2016

Topological Hubbard model and its high-temperature quantum Hall effect.

Titus Neupert¹, Luiz Santos, Shinsei Ryu

¹Condensed Matter Theory Group, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland.

Physical Review Letters

|March 10, 2012

Summary

We explored a variant of the repulsive Hubbard model, finding that strong interactions at 1/2 filling create both ferromagnetic order and a quantized charge Hall effect, potentially useful for future electronics.

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Area of Science:

Condensed matter physics
Quantum mechanics
Materials science

Background:

The repulsive Hubbard model is a key model for understanding electron interactions in materials.
A time-reversal symmetric variant of this model is investigated.
Quantized spin Hall effect is known to occur in fully occupied bands.

Purpose of the Study:

To investigate the ground state properties of a time-reversal symmetric repulsive Hubbard model at 1/2 band filling.
To determine if spontaneous long-range order and quantized charge Hall effect can emerge.
To explore potential applications of these phenomena.

Main Methods:

Theoretical study of the repulsive Hubbard model on a planar lattice.
Analysis of the ground state properties at 1/2 filling.
Investigating the role of strong electron-electron interactions.

Main Results:

At 1/2 filling, the ground state spontaneously develops Ising ferromagnetic order.
A quantized charge Hall effect emerges simultaneously with ferromagnetic order.
These phenomena occur when electron-electron interactions are sufficiently strong.

Conclusions:

The studied model exhibits rich emergent phenomena driven by strong correlations.
The simultaneous emergence of ferromagnetic order and quantized charge Hall effect is a significant finding.
Potential for high-temperature, field-free quantized charge Hall effect in strongly correlated materials warrants further investigation for practical applications.